unisonic technologies co., ltd 2sc5353 npn silicon transistor www.unisonic.com.tw 1 of 4 copyright ? 2011 unisonic technologies co., ltd qw-r203-031,e high voltage npn transistor ? description switching regulator and high voltage switching applications high-speed dc-dc converter applications ? features * excellent switching times: t r = 0.7 s (max) , t f = 0.5 s (max) * high collectors breakdown voltage: v ceo = 700v to-220 1 to-126 1 to-220f 1 1 to-126c ? ordering information ordering number pin assignment lead free halogen free package 1 2 3 packing 2sc5353l-t60-k 2SC5353G-T60-K to-126 b c e bulk 2sc5353l-t6c-k 2sc5353g-t6c-k to-126c b c e bulk 2sc5353l-ta3-t 2sc5353g-ta3-t to-220 b c e tube 2sc5353l-tf3-t 2sc5353g-tf3-t to-220f b c e tube
2sc5353 npn silicon transistor unisonic technologies co., ltd 2 of 4 www.unisonic.com.tw qw-r203-031,e ? absolute maximum ratings (tc = 25 ) parameter symbol ratings unit collector-base voltage v cbo 900 v collector-emitter voltage v ceo 700 v emitter-base voltage v ebo 7 v dc i c 3 collector current pulse i cp 5 a base current i b 1 a to-220f/ to-126/to-126c 20 collector power dissipation to-220 p d 25 w junction temperature t j +150 storage temperature t stg -40 ~ +150 note absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? electrical characteristics (tc = 25 ) parameter symbol test conditions min typ max unit collector-base breakdown voltage bv cbo i c =1 ma, i e = 0 900 v collector-emitter breakdown voltage bv ceo i c =10 ma, i b = 0 700 v collector cut-off current i cbo v cb =720v, i e = 0 100 a emitter cut-off current i ebo v eb =7v, i c = 0 10 a h fe1 v ce =5 v, i c =1 ma 10 dc current gain h fe2 v ce =5 v, i c =0.15 a 15 collector-emitter satu ration voltage v ce(sat) i c =1.2 a, i b =0.24 a 1.0 v base-emitter satura tion voltage v be(sat) i c =1.2 a, i b =0.24 a 1.3 v rise time t r 0.7 storage time t stg 4.0 switching time fall time t f i b1 i b2 300 0.5 s
2sc5353 npn silicon transistor unisonic technologies co., ltd 3 of 4 www.unisonic.com.tw qw-r203-031,e ? typical characteristics collector current, i c (a) collector current, i c (a) dc current gain vs. collector current dc current gain, h fe collector current, i c (a) t c =100 25 -20 common emitter v ce = 5 v 0.001 0.01 0.1 1 10 1 10 100 1000 collector-emitter saturation voltage vs. collector current collector-emitter saturation voltage, v ce (sat) (v) collector current, i c (a) 0.01 0.1 1 10 0.05 1 10 common emitter i c /i b = 3 t c =100 25 -20 0.1
2sc5353 npn silicon transistor unisonic technologies co., ltd 4 of 4 www.unisonic.com.tw qw-r203-031,e ? typical characteristics(cont.) collector current, i c (a) collector power dissipation, p d (w) utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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